Method of fabricating tantalum nitride barrier layer and semiconductor device thereof

ABSTRACT

A method of fabricating tantalum nitride barrier layer in an ultra low threshold voltage semiconductor device is provided. The method includes forming a high-k dielectric layer over a semiconductor substrate. Subsequently, a tantalum nitride barrier layer is formed on the high-k dielectric layer. The tantalum nitride barrier layer has a Ta:N ratio between 1.2 and 3. Next, a plurality of first metal gates is formed on the tantalum nitride barrier layer. The first metal gates are patterned, and then a second metal gate is formed on the tantalum nitride barrier layer.

PRIORITY CLAIM AND CROSS-REFERENCE

This application claims priority of U.S. provisional application Ser.No. 62/279,437, which was filed on Jan. 15, 2016, the entire disclosureof which is incorporated herein by reference.

BACKGROUND

Integrated circuit (IC) industry has experienced rapid growth. As thegenerations of ICs proceeds, the dimension is smaller while thestructure is more complex. These advances have increased the standard ofIC manufacturing, and development in IC processing and fabricating isneeded. In the course of IC evolution, functional density (i.e., thenumber of interconnected devices per chip area) has increased, whilegeometry size (i.e., the smallest component that can be created using afabrication process) has decreased.

This scaling down process gives rise of a few issues, for example,current leakage and material compatibility. Particle penetration andunavoidable depletion effect occur in conventional polysilicon gate.Work function metals have been employed to replace the conventionalpolysilicon gate. Elevation in gate capacitance and reduction of gatedielectric layer are among the advantage of using metal gate stacks.However, undesired interaction between the metal gate stacks and theunderlying dielectric material renders device performance poor.

BRIEF DESCRIPTION OF THE DRAWINGS

Aspects of the present disclosure are best understood from the followingdetailed description when read with the accompanying figures. It isnoted that, in accordance with the standard practice in the industry,various features are not drawn to scale. In fact, the dimensions of thevarious features may be arbitrarily increased or reduced for clarity ofdiscussion.

FIG. 1 is a flow chart showing a method of depositing tantalum nitridebarrier layer in a semiconductor device in accordance with someembodiments of the instant disclosure;

FIG. 2 is a flow chart showing fabricating tantalum nitride barrierlayer in an ultra low threshold voltage semiconductor device inaccordance with some embodiments of the instant disclosure;

FIG. 3 is a graph showing the mapping of device leakage current on awafer;

FIGS. 4A-4C are schematic diagrams illustrating embodiments of themethod shown in FIG. 2; and

FIG. 5 is a schematic diagram illustrating a metal gate stack inaccordance with some embodiments of the instant disclosure.

DETAILED DESCRIPTION

The following disclosure provides many different embodiments, orexamples, for implementing different features of the provided subjectmatter. Specific examples of components and arrangements are describedbelow to simplify the present disclosure. These are, of course, merelyexamples and are not intended to be limiting. For example, the formationof a first feature over or on a second feature in the description thatfollows may include embodiments in which the first and second featuresare formed in direct contact, and may also include embodiments in whichadditional features may be formed between the first and second features,such that the first and second features may not be in direct contact. Inaddition, the present disclosure may repeat reference numerals and/orletters in the various examples. This repetition is for the purpose ofsimplicity and clarity and does not in itself dictate a relationshipbetween the various embodiments and/or configurations discussed.

Metal gate structure replaces conventional polysilicon gate electrode,and the dimension of transistors decreases altogether. The thickness ofthe gate oxide decreases so as to maintain performance with theshrinking gate length. High dielectric constant (high-k or HK) gateinsulator layers are used to replace conventional silicon oxide becausethey can decrease physical limit thickness, reduce leakage current andobtain an equivalent capacitance in an identical equivalent oxidethickness (EOT). However, when a high k dielectric material and a metalare adopted to form a gate stack, various issues may arise in themanufacturing.

A field effect transistor device is considered to be short when thechannel length is the same order of magnitude as the depletion-layerwidths of the source and drain junction. As the device scales down so asto increase the operation speed and the number of components per chip,the short channel effects arise. When the depletion regions surroundingthe drain extend to the source, so that the two depletion layers merge,punch-through or drain-induced barrier lowering (DIBL) occurs. Thesephenomena are called short channel effect. Obviously, short channeleffect can be attenuated with longer channel. However, increase in sizeis out of the question.

Without compromising chip dimension, short channel effect can beminimized with thinner oxides, larger substrate doping and shallowerjunction. Given a radius of the junction depth is denoted as R, and thechannel length as L. The threshold voltage shift term is proportional toR/L. As a result, this term becomes more prominent for transistors withshorter channel lengths, and it approaches zero for long channel where Lis much larger than R. Those devices with smaller geometry have higherdrain currents at the same gate-to-source voltage. Hence devices withsmaller geometry have lower threshold voltages. In the case of ultra lowthreshold voltage device, the short channel effect can be even morepronounced.

Threshold voltages largely dictate the speed, standby current andoperating current performance characteristics in transistors. Thethreshold voltage must be set to maximize the “on” current, whileminimizing the “off” current. Very often this is a trade off that isdetermined by the circuit design and application. It is not uncommonthat the threshold voltage is adjusted through fine tuning of the dopinglevel in the channel region of the transistors with a threshold voltageadjust implant.

As an alternative method of adjusting threshold voltage, the workfunction of the gate can be controlled. With the advances of metal gatetechnologies, the choice of an appropriate work function material isnecessary for the transistors. The work function is the energy requiredto remove an electron from the Fermi level to vacuum. The work functionof different materials varies, and N and P type transistor requiredifferent work function. Selection of different metal materials mayresult in additional fabrication steps and increase manufacturingcomplexity, which, in turn, undermines device performance.

It has been shown that many of the desirable gate metal materials haveadhesion and/or stability problems when placed in direct contact withhigh k dielectrics, such as HFO₂ or ZrO₂. For example, metals such asTi, Hf or Zr, scavenge O, reducing the underlying dielectric film,causing degradation and increased leakage. Deposition of a barrier layer(also referred to as a “cap layer”) between the metal gate and high kdielectrics can overcome the compatibility problem. Therefore, thematerial of barrier layer can have determined effect to the overalldevice performance.

Please refer to FIG. 4A. FIG. 4A is a schematic cross-sectionalelevation view of a semiconductor device. The semiconductor deviceincludes a substrate 410. The substrate 410 is a semiconductor substrateincluding silicon. Alternatively or additionally, the substrate 210includes another elementary semiconductor, such as germanium, a compoundsemiconductor including silicon carbie, gallium arsenic, galliumphosphide, indium phosphide, indium arsenide, or indium antimonide. Thesubstrate 410 may include an alloy semiconductor, for example, SiGe,GaAsP, AlInAs, AlGaAs, GaInAs, GaInP, GaInAsP or a combination thereof.In yet another alternative, the substrate 410 is a semiconductor oninsulator (SOI). The substrate 410 includes various dopingconfigurations depending on design requirements of the device.

An isolation feature 420 is disposed in the substrate 410 to isolatevarious regions and devices of the substrate 410. The isolation feature420 utilizes isolation technology, such as local oxidation of silicon(LOCOS) or shallow trench isolation (STI), to define and electricallyisolate different regions in the substrate 410. The isolation feature420 includes silicon oxide, silicon nitride, silicon oxynitride and anyother suitable materials. The isolation feature 420 may be formed by anysuitable process. For example, forming a shallow trench isolatorincludes using a lithography process to expose a portion of thesubstrate, etching a trench in the exposed portion of the substrate andfilling the trench with one or more dielectric materials.

Source/drain features 430 are disposed in the substrate 410. Thesource/drain features 430 may include lightly doped source and drainregions and heavily doped source and drain regions. The lightly andheavily doped source and drain regions may be formed by ion implantationor diffusion or n-type dopants, such as phosphorous or arsenic, orp-type dopants, such as boron or BF2. An annealing process may beperformed to activate dopants in the source/drain regions 430. A channelregion 440 is defined in between the source/drain regions 430.

A high-k dielectric layer 450 is disposed over the substrate 410. Thehigh-k dielectric layer 450 may have a thickness between 5 Å and 30 Å.Materials of the high-k dielectric layer 450 includes, for example,HfO₂, HfSiO, HfSiON, HfTaO, HfTiO, HfZrO, zirconium oxide, aluminiumoxide, hafnium dioxide-alumina (HfO₂—Al₂O₃) alloy, or any other suitablehigh-k dielectric materials. The formation of the high-k dielectriclayer 450 includes deposition, lithography patterning, etching and othersuitable processes. The deposition may include physical vapor deposition(PVD), chemical vapor deposition (CVD), atomic layer deposition (ALD),plasma enhanced CVD (PECVD), remote plasma CVD (RPCVD), molecularorganic CVD (MOCVD), sputtering, plating or combination thereof. Thelithography patterning includes resist coating, soft baking, maskaligning, exposure, post-exposure baking, developing the photoresist,rinsing, drying. The etching includes dry etching and wet etching.

After the formation of high-k dielectric layer 450, a tantalum nitridebarrier layer is formed. FIG. 1 is a flow chart showing a method 100 ofdepositing tantalum nitride barrier layer in a semiconductor device, inportion or entirety, according to various aspects of the instantdisclosure. The method 100 begins at operation 110 where a depositingtemperature is adjusted.

The tantalum nitride barrier layer 460 is formed by atomic layerdeposition or chemical vapor deposition. When depositing the tantalumnitride barrier layer 460, a depositing temperature is adjustable. Thedepositing temperature in the processing chamber has pivotal effect onthe tantalum nitride ratio. As previously discussed, a metal barrierlayer is required in between the high-k dielectric layer and the metalgate, and the material of the metal barrier layer is related to thedevice performance because the particles in the metal barrier layer mayreact with the metal gate. It is found that nitrogen rich metal barrierlayer is prone to induce nitrogen-titanium interaction. This undesiredinteraction leads to higher etching rate in the metal gate duringfabricating process. Undesired anisotropic etching can cause severedevice defect, for example, poor conduction or uneven surface. The ratioof tantalum and nitrogen in the barrier layer 460 therefore plays keyrole in the device performance. The tantalum nitride barrier layer 460facilitates metal gates binding to the underlying high-k dielectriclayer 450, and, at the same time, its content concentration has to becarefully controlled to avoid further interaction.

The concentration of tantalum and nitrogen in the tantalum nitridebarrier layer 460 is manipulated by temperature and gas flow capacity.In some embodiments of the instant disclosure, the tantalum nitridebarrier layer 460 is formed by ALD. In operation 110, the depositiontemperature in the chamber is finely tuned. A higher depositiontemperature leads to higher nitrogen concentration. That is, thetantalum to nitrogen (Ta:N) ratio is lower, dropping to less than 1.3.When a lower deposition temperature is applied, the nitrogenconcentration decreases, and the tantalum to nitrogen ratio increases.For example, when the deposition temperature is set for 275° C., thetantalum to nitrogen ratio is approximately 1.3. When the depositiontemperature decreases to about 250° C., the tantalum to nitrogen ratiocomes to approximately 1.4 because the nitrogen concentration falls. Asthe deposition temperature climbs to 300° C., the tantalum to nitrogenratio increases to 1.6. The deposition temperature and Ta:N ratio is ininverse proportion. A higher deposition temperature implies a lower Ta:Nratio, while a lower deposition temperature suggests a higher Ta:Nratio.

Another approach to tune the ratio of tantalum and nitrogen is by gasflow capacity, namely the NH₃ gas flow, as shown in FIG. 1, operation120. Unlike the deposition temperature, when the NH₃ gas flow capacityincreases, the concentration of nitrogen in the tantalum nitride barrierlayer 460 increases. For example, when the NH₃ gas flow capacity is setfor at 800 ml/m (standard cubic centimeters per minute, SCCM), thetantalum to nitrogen ratio is close to 1. If the NH₃ gas flow capacitydecreases to 600 ml/m, the nitrogen concentration drops altogether, andthe tantalum to nitrogen ratio climbs up to above 1.4. By manipulatingthe NH₃ gas flow capacity, the tantalum nitride barrier layer can have afinely tuned tantalum to nitrogen concentration.

The adjustment of deposition temperature and the NH₃ gas flow capacitymay take turns or performed simultaneously. The action sequence does notaffect the resulting tantalum nitride barrier layer concentration. Inorder to arrive at a desired Ta:N ratio, it can be either adjusting thedeposition temperature or adjusting NH₃ gas flow capacity alone.Furthermore, the adjustment may take place in multi steps. For example,the deposition temperature adjustment may be repeated at least twice ineither the same conditions or different conditions. It also applies tothe adjustment of NH₃ gas flow capacity where the gas flow capacity maybe conducted in more than once. The multiple cycles suggest that thetantalum nitride barrier layer may include more than one layer, and eachlayer may have slightly different composition determining upon thereaction conditions. As one example, in a first cycle, the depositiontemperature is set as 275° C. and the NH₃ gas flow capacity at 500 ml/m.In a following cycle, the deposition temperature remains the same, whileNH₃ gas flow capacity increases to 600 ml/m. The conditions varyaccording to desired tantalum to nitrogen ratio requirement of thesemiconductor device. The final thickness of the tantalum nitridebarrier layer ranges between 15 and 20 Å.

Combining the effect of deposition temperature in the chamber and theNH₃ gas flow capacity, the tantalum nitride barrier layer may have aTa:N ratio ranging between 1.2 and 3. Nitrogen concentration ispurposefully suppressed so as to attenuate its adverse reaction withneighbouring elements, for example, titanium (Ti) from the overlyingmetal gate. Dielectric leakage can be minimised when the nitrogenconcentration in the tantalum nitride barrier layer is finely tuned to alesser degree. The tantalum nitride barrier layer can act as a cappinglayer that facilitates binding and prevents oxygen scavenge. Morespecifically, by interrupting the conventional 1:1 tantalum to nitrogenratio, the nitrogen concentration is less in the tantalum nitridebarrier layer 460 such that the interaction between the nitrogen in thetantalum nitride barrier layer 460 and the overlying metal gate can bereduced. Moreover, the element in the metal gate, for example, Ti, isless likely to penetrate the tantalum nitride barrier layer 460, and theunderlying high-k dielectric layer 450 is protected from oxygen vacancyoccupation. In short, the tantalum nitride barrier layer 460 has atantalum to nitrogen ratio larger than 1.2, and this ratio discouragesparticle diffusion among different layers. As a result, dielectricleakage is greatly minimized.

Attention is now invited to FIG. 3. FIG. 3 shows a graph providinginformation about the device leakage current when the tantalum nitridebarrier layer 460 is used. The lighter grey lines are the data collectedfrom a wafer without the tantalum nitride barrier layer. The darker greylines are the data collected from a wafer employing the tantalum nitridebarrier layer 460 in the device. The dotted line cutting through betweenthe 0.01 and 0.02 represents a standard value of device leakage currentat ampere (A). In the presence of the tantalum nitride barrier layer460, the device shift to the left of the standard value, which suggestsa less nitrogen induced metal ion diffusion and therefore lessdielectric leakage. The driven current is much more stable when thenitrogen atom concentration in the tantalum nitride barrier layer isadjusted to a lower end.

Attention is now invited to FIG. 2, illustrating a method 200 offabricating tantalum nitride barrier layer in an ultra low thresholdvoltage semiconductor device, in portion or entirety, according tovarious aspects of the instant disclosure. As previously discussed,threshold voltage is affected by short channel effect, includingpunch-through and drain-induced barrier lowering. The selection ofmaterials has pivotal effect to the device performance in the ultra lowthreshold voltage because undesired material interaction, for example,nitrogen and titanium, may prevent device performance to its full.

As set forth in operation 210 of FIG. 2, a high-k dielectric layer isformed over a semiconductor substrate. This is illustrated in FIG. 4A,where the high-k dielectric layer 450 is formed on the substrate 410. Itshould be understood that in some embodiments, the substrate 410includes more than one set of gate stacks. For example, in an ultra lowthreshold voltage semiconductor device, the number of gate stacks isfour, and each of which serves a different function or with a differentstructure. For the sake of clarity, only one gate stack is shown inFIGS. 4A-4C, and the instant disclosure is not limited thereto. Thecharacteristics of the substrate 410 may be the same as described inoperation 110 of FIG. 1, and it is not repeated to avoid redundancy. Achannel region 440 is defined in between the source/drain regions 430.In some embodiments, the high-k dielectric layer 450 covers at least thechannel region 440 over the substrate 410. As shown in FIG. 4A, thehigh-k dielectric layer 450 is formed on the entire surface of thesubstrate 410, covering the channel region 440, source/drain regions 430and isolation features 420.

Next, as set forth in operation 120, the tantalum nitride barrier layeris formed on the high-k dielectric layer. This is also illustrated inFIG. 4A. The tantalum and nitrogen ratio is controlled between 1.2 and3. The ratio is fine tuned through the processing conditions. Morespecifically, heat and gas flow capacity determines the ratio oftantalum to nitrogen. By adjusting the deposition temperature in thereaction chamber, the resulting tantalum and nitrogen concentration canbe altered. With higher temperature, the concentration of nitrogenincreases. When the reaction is taking place in a lower temperature, forexample, 275° C., the nitrogen concentration is lower, leading to atantalum and nitrogen ratio higher than at least 1.2. In addition totemperature adjustment, NH₃ gas flow capacity adjustment results inchanges in the ratio. In some embodiments, the NH₃ gas flow capacity isset as approximately 600 ml/m, and the nitrogen concentration can bekept low. For example, at 600 ml/m, the ratio of tantalum to nitrogen isclose to 1.4. If the gas flow capacity increases, the nitrogenconcentration increases, and the ratio drops to lower than 1.2.

As set forth in operation 230, in the case of ultra low thresholdvoltage semiconductor device, after the formation of the tantalumnitride barrier layer, more metal gates are formed on the tantalumnitride barrier layer. This is illustrated in FIG. 4B, where a pluralityof first metal gates 472, 474 and 476 are deposited on the tantalumnitride barrier layer 460. The first metal gates 472, 474 and 476 aredeposited by, for example, PVD, CVD, ALD, PECVD, RPCVD, MOCVD,sputtering, plating, or any other suitable methods.

As set forth in operation 240, the first metal gates 472, 474 and 476are patterned according to the design of the ultra low threshold voltagesemiconductor device. Each of the first metal gates serves differentwork functions in varied gate stacks, and in some embodiments, the firstmetal gates are made of TiN. The tantalum nitride barrier layer 460blocks titanium diffusion to the high-k dielectric layer 450. The lownitrogen concentration in the tantalum nitride barrier layer 460minimizes nitrogen and titanium interaction, which leads to oxygenscavenge in the high-k dielectric layer 450. Titanium of the first metalgates 472, 474 and 476 is prevented from invading to the high-kdielectric layer 450, and dielectric leakage is greatly reduced. Inaddition, during the first metal gates 472, 474 and 476 patterning, theetching rate is more uniform because titanium atoms are retained in thefirst metal gates 472, 474 and 476 with minimum interaction withnitrogen from the tantalum nitride barrier layer 460. In other words,the interface between the first metal gates and the tantalum nitridebarrier layer is clean because low-concentration nitrogen in thetantalum nitride barrier layer is unlikely to induce titanium andnitrogen reaction. The patterning of the first metal gates 472, 474 and476 may take place in between the deposition of each of the first metalgates, and the instant disclosure is not limited thereto.

As set forth in operation 250, after the patterning, a chemicalmechanical polishing (CMP) may be performed to remove the first metalgates 472, 474 and 476 on one of the gate structure until the tantalumnitride barrier layer is exposed. This is illustrated in FIG. 4C, wherethe first metal gates 472, 474 and 476 are removed from one of the fourgate stacks. As a result, one of the gate stacks is clear of the firstmetal gates and available for further processing. For example,patterning may be performed such that the tantalum nitride barrier layer460′ and the high-k dielectric layer 450′ acting as a foundation of agate stack. In some embodiments, the first metal gates 472, 474 and 476are the conductive features in the other three gate stacks of the ultralow threshold voltage semiconductor device, and a fourth gate has asecond metal gate. As set forth in operation 250, the second metal gateis disposed on the tantalum nitride barrier layer 460′ to form thefourth gate stack.

In some embodiment, after the deposition of the first and second metalgates, a blocking layer (not shown) may be deposited on the gate stacksby, for example, PVD, CVD, PECVD, RPCVD, MOCVD or any other suitablemethods. The material of the blocking layer may be, for example,titanium nitride (TiN). A tungsten layer (not shown) is disposed on theblocking layer to complete the ultra low threshold voltage semiconductordevice.

Attention is now invited to FIG. 5. FIG. 5 illustrates a portion ofsemiconductor device where a metal gate stack 500 is shown. The metalgate stack 500 includes a substrate 510, a gate structure and adielectric layer 590. The substrate 510 includes a source/drain regions530 and a channel region 540 is defined in between the source/drainregions 530. Isolation features 520 are disposed on either side of thesource/drain regions 530 to isolate the gate stack from the otherfunctional gate structure on the substrate 510. A high-k dielectriclayer 550 is disposed over the channel region 540 on the substrate 510.A tantalum nitride barrier layer 560 is disposed on top of the high-kdielectric layer 550. The tantalum nitride barrier layer 560 has atantalum and nitrogen ratio ranging between 1.2 and 3. The tantalumnitride barrier layer 560 may contain more than one layer. Furthermore,each of the layers may have different tantalum and nitrogen ratiodepending upon device design. For example, a first tantalum nitridebarrier layer may have a Ta:N ratio of 1.5, and a second tantalumnitride barrier layer has a Ta:N ratio of 2. The Ta:N ratio is flexibleand adjustable upon the deposition of the tantalum nitride barrier layerby manipulating the deposition temperature and NH₃ gas flow capacity. Athickness of the final tantalum nitride barrier layer is fromapproximately 15 to 20 Å. The nitrogen atomic concentration in thetantalum nitride barrier layer 560 is purposefully suppressed such thatnitrogen induced metal ion migration can be minimized. The oxygenvacancy scavenge in the underlying high-k dielectric layer is thereforereduced because metal ions does not travel far beyond the tantalumnitride barrier layer 560 when free nitrogen is scarcely present.

A metal gate layer 570 is disposed on the tantalum nitride barrier layer560. A pair of spacers 580 flanks the gate stack in between. The spacers580 are positioned adjacent sidewalls of the gate stack (high-kdielectric layer 550, the tantalum nitride barrier layer 560 and themetal gate layer 570). The material of the spacers 580 may be, forexample, silicon oxide, silicon carbon nitride or combinations thereof.The dielectric layer 590 is disposed over the substrate 510, such as aninterlayer (or inter-level) dielectric (ILD) layer. The dielectric layer590 includes a dielectric material, such as silicon oxide, siliconnitride, silicon oxynitride, tetraehylorthosilicate (TEOS) formed oxide,phosphosilicate galss (PSG), borophosphosilicate glass (BPSG), low-kdielectric material and any other suitable dielectric material. Thedielectric layer 590 may be multi-layered with a selection of differentdielectric materials. The metal gate stack 500 is then completed.

In one aspect of the instant disclosure, a method of depositing tantalumnitride barrier layer is provided. The method includes adjusting adepositing temperature between 275-300° C. and adjusting NH₃ gas flowcapacity between 500-700 ml/m.

In another aspect of the instant disclosure, a method of fabricatingtantalum nitride barrier layer in an ultra low threshold voltagesemiconductor device is provided. The method includes forming a high-kdielectric layer over a semiconductor substrate. Subsequently, atantalum nitride barrier layer is formed on the high-k dielectric layer.The tantalum nitride barrier layer has a Ta:N ratio between 1.2 and 3.Next, a plurality of first metal gates is formed on the tantalum nitridebarrier layer. The first metal gates are patterned, and then a secondmetal gate is formed on the tantalum nitride barrier layer.

In still another aspect of the instant disclosure, a metal gate stack isprovided. The metal gate stack includes a substrate having source/drainregions. A high-k dielectric layer is disposed over the substrate andbetween the source/drain regions. A tantalum nitride barrier layer isdisposed on top of the high-k dielectric layer. The tantalum nitridebarrier layer has a Ta:N ratio between 1.2 and 3. A metal gate layer isdisposed over the tantalum nitride barrier layer to form a metal gatestack.

The foregoing outlines features of several embodiments so that thoseskilled in the art may better understand the aspects of the presentdisclosure. Those skilled in the art should appreciate that they mayreadily use the present disclosure as a basis for designing or modifyingother processes and structures for carrying out the same purposes and/orachieving the same advantages of the embodiments introduced herein.Those skilled in the art should also realize that such equivalentconstructions do not depart from the spirit and scope of the presentdisclosure, and that they may make various changes, substitutions, andalterations herein without departing from the spirit and scope of thepresent disclosure.

1.-6. (canceled)
 7. A method, comprising: forming a high-k dielectriclayer over a semiconductor substrate; forming a tantalum nitride barrierlayer on the high-k dielectric layer, wherein the tantalum nitridebarrier layer has a Ta:N ratio between 1.2 and 3; depositing a pluralityof first metal gates on the tantalum nitride barrier layer; patterningthe plurality of first metal gates on the tantalum nitride barrierlayer; and forming a second metal gate on the tantalum nitride barrierlayer.
 8. The method according to claim 7, wherein a depositingtemperature is between 275-300° C. and an NH₃ gas flow rate is between500-700 ml/m while forming the tantalum nitride barrier layer.
 9. Themethod according to claim 8, wherein the depositing temperature isconstant while forming the tantalum nitride barrier layer.
 10. Themethod according to claim 8, wherein the NH₃ gas flow rate is constantwhile forming the tantalum nitride barrier layer.
 11. The methodaccording to claim 7, wherein forming the tantalum nitride barrier layeron the high-k dielectric layer is conducted at least twice.
 12. Themethod according to claim 11, comprising: changing at least one of adepositing temperature or an NH₃ gas flow rate between a first instanceof forming the tantalum nitride barrier layer and a second instance offorming the tantalum nitride barrier layer.
 13. The method according toclaim 7, wherein at least four functional gate stacks from the pluralityof first metal gates and the second metal gate.
 14. The method accordingto claim 13, comprising: depositing a blocking layer on the at leastfour functional gate stacks; and depositing a tungsten layer on theblocking layer.
 15. The method according to claim 14, wherein theblocking layer is a TiN layer.
 16. The method according to claim 14,wherein the plurality of first metal gates are TiN metal gates. 17.-20.(canceled)
 21. A method, comprising: forming a high-k dielectric layerover a semiconductor substrate; forming a tantalum nitride barrier layeron the high-k dielectric layer; depositing a first metal gate on thetantalum nitride barrier layer; patterning the first metal gate and thetantalum nitride barrier layer; removing the first metal gate to exposea top surface of the tantalum nitride barrier layer; and forming asecond metal gate on the tantalum nitride barrier layer.
 22. The methodaccording to claim 21, wherein the patterning comprises patterning thehigh-k dielectric layer.
 23. The method according to claim 21, wherein asource/drain region is exposed upon patterning the high-k dielectriclayer.
 24. The method according to claim 21, wherein forming thetantalum nitride barrier layer comprises: forming a first portion of thetantalum nitride barrier layer while maintaining a depositingtemperature at a first depositing temperature and an NH₃ gas flow rateat a first NH₃ gas flow rate; adjusting at least one of the depositingtemperature to a second depositing temperature or the NH₃ gas flow rateto a second NH₃ gas flow rate; and forming a second portion of thetantalum nitride barrier layer using at least one of the seconddepositing temperature or the second NH₃ gas flow rate.
 25. The methodaccording to claim 24, wherein forming the second portion of thetantalum nitride barrier layer comprises: forming the second portion ofthe tantalum nitride barrier layer while maintaining the depositingtemperature at the second depositing temperature and the NH₃ gas flowrate at the first NH₃ gas flow rate.
 26. The method according to claim24, wherein forming the second portion of the tantalum nitride barrierlayer comprises: forming the second portion of the tantalum nitridebarrier layer while maintaining the depositing temperature at the firstdepositing temperature and the NH₃ gas flow rate at the second NH₃ gasflow rate.
 27. The method according to claim 24, wherein forming thesecond portion of the tantalum nitride barrier layer comprises: formingthe second portion of the tantalum nitride barrier layer whilemaintaining the depositing temperature at the second depositingtemperature and the NH₃ gas flow rate at the second NH₃ gas flow rate.28. The method according to claim 24, wherein: the first depositingtemperature and the second depositing temperature are between 275-300°C., and the first NH₃ gas flow rate and the second NH₃ gas flow rate arebetween 500-700 ml/m.
 29. The method according to claim 21, wherein thetantalum nitride barrier layer has a Ta:N ratio between 1.2 and
 3. 30.(canceled)
 31. A method, comprising: forming a high-k dielectric layerover a semiconductor substrate; forming a first portion of a tantalumnitride barrier layer while maintaining a depositing temperature at afirst depositing temperature and an NH₃ gas flow rate at a first NH₃ gasflow rate; adjusting at least one of the depositing temperature to asecond depositing temperature or the NH₃ gas flow rate to a second NH₃gas flow rate; and forming a second portion of the tantalum nitridebarrier layer using at least one of the second depositing temperature orthe second NH₃ gas flow rate; and depositing a plurality of first metalgates on the tantalum nitride barrier layer; patterning the plurality offirst metal gates on the tantalum nitride barrier layer; and forming asecond metal gate on the tantalum nitride barrier layer.